5A low leakage diode 50 - 1000V high speed diode 50~75ns high efficiency diode
High current diode features:
- High current capability
- High surge current capability
- High reliability
- Low reverse current
- Low forward voltage drop
- Fast switching for high efficiency
- Pb / RoHS Free
High efficiency rectifier mechanical Data:
- Case : DO-201AD Molded plastic
- Epoxy : UL94V-O rate flame retardant
- Lead : Axial lead solderable per MIL-STD-202,
- Method 208 guaranteed
- Polarity : Color band denotes cathode end
- Mounting position : Any
- Weight : 1.16 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
| Parameter |
Symbol |
HER
501
|
HER
502
|
HER
503
|
HER
504
|
HER
505
|
HER
506
|
HER
507
|
HER
508
|
Unit |
| Maximum repetitive peak reverse voltage |
VRRM |
50 |
100 |
200 |
300 |
400 |
600 |
800 |
1000 |
V |
| Maximum RMS voltage |
VRMS |
35 |
70 |
140 |
210 |
280 |
420 |
560 |
700 |
V |
| Maximum DC blocking voltage |
VDC |
50 |
100 |
200 |
300 |
400 |
600 |
800 |
1000 |
V |
| Maximum Average Forward Current 0.375"(9.5mm) Lead Length Ta = 50 °C |
IF(AV) |
1.0 |
A |
|
Peak forward surge current 8.3 ms Single half sine wave Superimposed
on rated load (JEDEC Method)
|
IFSM |
30 |
A |
| Maximum Forward Voltage at I F = 1.0 A. |
VF |
1.1 |
1.7 |
V |
| Maximum DC Reverse Current Ta = 25 °C at rated DC Blocking Voltage Ta = 100 °C |
IR |
5.0 |
μA |
| IR(H) |
50 |
μA |
| Typical Junction Capacitance (1) |
CJ |
15 |
pF |
|
Maximum Reverse Recovery Time ( Note 1 )
|
Trr |
50 |
75 |
ns |
| Junction Temperature Range |
TJ |
-65~+125 |
℃ |
| Storage Temperature Range |
Tstg |
-65~+150 |
℃ |
Notes :
( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.
( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC
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5A Low Leakage High Efficiency Diode , 50 - 1000V High Speed Diode 50~75ns Images
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